Package：48-VFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 8MBIT PARALLEL 48VFBGA

ISSI, Integrated Silicon Solution Inc

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件：748.93 Kbytes 页数：20 Pages

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件：748.93 Kbytes 页数：20 Pages

ISSI

矽成半导体

512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV51216EFALL) – 2.2V-3.6V VDD (IS62/65WV51216EFBLL)  Optional ERR

文件：748.93 Kbytes 页数：20 Pages

ISSI

矽成半导体