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IS61WV102416ALL

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

文件:127.6 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV102416ALL

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:131.11 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV102416ALL

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:323.87 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS61WV102416ALL-20MI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

文件:323.87 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS61WV102416ALL-20MI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

文件:127.6 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV102416ALL-20TI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

文件:127.6 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV102416ALL-20TLI

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance

文件:323.87 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS61WV102416ALL_0610

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:131.11 Kbytes 页数:21 Pages

ISSI

矽成半导体

IS61WV102416ALL_12

1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

文件:323.87 Kbytes 页数:20 Pages

ISSI

矽成半导体

IS61WV102416ALL

High Speed Low Power Asynchronous SRAM

ISSI

矽成半导体

详细参数

  • 型号:

    IS61WV102416ALL

  • 功能描述:

    静态随机存取存储器 16M(1Mx16) 20ns Async 静态随机存取存储器

  • RoHS:

  • 制造商:

    Cypress Semiconductor

  • 存储容量:

    16 Mbit

  • 组织:

    1 M x 16

  • 访问时间:

    55 ns

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.2 V

  • 最大工作电流:

    22 uA

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 40 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    TSOP-48

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
Integrated
20+
原装
65790
原装优势主营型号-可开原型号增税票
询价
ISSI
23+
TSOP
8000
专注配单,只做原装进口现货
询价
ISSI
23+
TSOP
7000
询价
ISSI
24+
TSOP
4500
只做原装正品现货 欢迎来电查询15919825718
询价
ISSI
25+
TSSOP48
15
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
17+
NA
9700
只做全新进口原装,现货库存
询价
INTEGRATE
24+
SMD
5500
长期供应原装现货实单可谈
询价
ISSI
25+23+
TSOP48
34887
绝对原装正品全新进口深圳现货
询价
ISSI
19+
TSOP48
8650
原装正品,现货热卖
询价
ISSI, Integrated Silicon Solut
21+
-
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
更多IS61WV102416ALL供应商 更新时间2026-2-2 9:04:00