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型号	下载订购	功能描述	制造商上传企业	LOGO
IS61NVF12836A	文件：194.17 Kbytes Page：27 Pages	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric 文件：194.17 Kbytes 页数：27 Pages	ISSI 矽成半导体	ISSI
IS61NVF12836A-6.5B2	文件：194.17 Kbytes Page：27 Pages	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric 文件：194.17 Kbytes 页数：27 Pages	ISSI 矽成半导体	ISSI
IS61NVF12836A-6.5B2I	文件：194.17 Kbytes Page：27 Pages	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric 文件：194.17 Kbytes 页数：27 Pages	ISSI 矽成半导体	ISSI
IS61NVF12836A-6.5B3	文件：194.17 Kbytes Page：27 Pages	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric 文件：194.17 Kbytes 页数：27 Pages	ISSI 矽成半导体	ISSI
IS61NVF12836A-6.5B3I	文件：194.17 Kbytes Page：27 Pages	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric 文件：194.17 Kbytes 页数：27 Pages	ISSI 矽成半导体	ISSI
IS61NVF12836A-6.5TQ	文件：194.17 Kbytes Page：27 Pages	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric 文件：194.17 Kbytes 页数：27 Pages	ISSI 矽成半导体	ISSI
IS61NVF12836A-6.5TQI	文件：194.17 Kbytes Page：27 Pages	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric 文件：194.17 Kbytes 页数：27 Pages	ISSI 矽成半导体	ISSI
IS61NVF12836A-7.5B2	文件：194.17 Kbytes Page：27 Pages	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric 文件：194.17 Kbytes 页数：27 Pages	ISSI 矽成半导体	ISSI
IS61NVF12836A-7.5B2I	文件：194.17 Kbytes Page：27 Pages	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric 文件：194.17 Kbytes 页数：27 Pages	ISSI 矽成半导体	ISSI
IS61NVF12836A-7.5B3	文件：194.17 Kbytes Page：27 Pages	128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric 文件：194.17 Kbytes 页数：27 Pages	ISSI 矽成半导体	ISSI

技术参数

Organization：
128Kx36
Product Type：
No-Wait Flowthrough
VccQ：
2.5V
Speed (MHz)：
133117
tKQ(ns)：
6.5
Package Pins：
BGA(119)
Temperature Grade：
C
Status：
Prod

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	IS61NVF12836A-6.5TQ	ISSI		QFP100	733	正品原装--自家现货-实单可谈	询价
标准国际(香港)有限公司	IS61NVF25636A-6.5B3L	IS61NVF25636A-6.5B3L	25+	100	100		询价
贸泽芯城（深圳）电子科技有限公司	IS61NVF25636A-6.5TQ	ISSI	23+	QFP100	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市斌腾达科技有限公司	IS61NVF25672-6.5B1	ISSI, Integrated Silicon Solut	21+	BGA	1000	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS61NVF25672-6.5B1	ISSI, Integrated Silicon Solut	24+	209-LFBGA(14x22)	56200	一级代理/放心采购	询价
深圳市安富世纪电子有限公司	IS61NVF25672-6.5B1	ISSI, Integrated Silicon Solu	23+	209-LFBGA14x22	7300	专注配单,只做原装进口现货	询价
深圳市宏捷佳电子科技有限公司	IS61NVF25672-6.5B1	ISSI Integrated Silicon Solut	25+	209-BGA	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市芯为科技有限公司	IS61NVF25672-6.5B1	ISSI	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
深圳市河锋鑫科技有限公司	IS61NVF512366.5TQL	ISSI Integrated Silicon Soluti	22+	100TQFP (14x20)	9000	原厂渠道,现货配单	询价

更多IS61NVF12836A供应商更新时间2025-12-10 16:19:00

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