128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM

DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric

文件：194.17 Kbytes 页数：27 Pages

ISSI

北京矽成

128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM

DESCRIPTION The 4 Meg NLF/NVF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 36 bits and 256K words by 18 bits, fabric

文件：194.17 Kbytes 页数：27 Pages

ISSI

北京矽成

ISSI(美国芯成)
QFP-100(14x20)

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司

ISSI(美国芯成)
LQFP-100(14x20)

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司

ISSI(美国芯成)
TQFP-100(14x20)

ISSI(美国芯成)

上传：深圳市宇创芯科技有限公司