IS61NLF51236技术资料参数批发采购第2页-114ic电子网

首页 >IS61NLF51236>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
IS61NLF51236-7.5TQ	文件：544.38 Kbytes Page：35 Pages	256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH NO WAIT STATE BUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single Read/Write control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MO 文件：544.38 Kbytes 页数：35 Pages	ISSI 矽成半导体	ISSI
IS61NLF51236-7.5TQI	文件：544.38 Kbytes Page：35 Pages	256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH NO WAIT STATE BUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single Read/Write control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MO 文件：544.38 Kbytes 页数：35 Pages	ISSI 矽成半导体	ISSI
IS61NLF51236-7.5TQLI	文件：544.38 Kbytes Page：35 Pages	256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH NO WAIT STATE BUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single Read/Write control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MO 文件：544.38 Kbytes 页数：35 Pages	ISSI 矽成半导体	ISSI
IS61NLF51236B	文件：1.88306 Mbytes Page：39 Pages	512K x36 and 1024K x18 18Mb, FLOW THROUGH NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.88306 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLF51236B-6.5B2	文件：1.88306 Mbytes Page：39 Pages	512K x36 and 1024K x18 18Mb, FLOW THROUGH NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.88306 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLF51236B-6.5B2I	文件：1.88306 Mbytes Page：39 Pages	512K x36 and 1024K x18 18Mb, FLOW THROUGH NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.88306 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLF51236B-6.5B2L	文件：1.88306 Mbytes Page：39 Pages	512K x36 and 1024K x18 18Mb, FLOW THROUGH NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.88306 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLF51236B-6.5B2LI	文件：1.88306 Mbytes Page：39 Pages	512K x36 and 1024K x18 18Mb, FLOW THROUGH NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.88306 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLF51236B-6.5B3	文件：1.88306 Mbytes Page：39 Pages	512K x36 and 1024K x18 18Mb, FLOW THROUGH NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.88306 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI
IS61NLF51236B-6.5B3I	文件：1.88306 Mbytes Page：39 Pages	512K x36 and 1024K x18 18Mb, FLOW THROUGH NO WAIT STATE BUS SYNCHRONOUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control usin 文件：1.88306 Mbytes 页数：39 Pages	ISSI 矽成半导体	ISSI

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技术参数

Organization：
512Kx36
Product Type：
No-Wait Flowthrough
VccQ：
2.5V/3.3V
Speed (MHz)：
133117
tKQ(ns)：
6.5
Package Pins：
BGA(119)
Temperature Grade：
C
Status：
Prod

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	IS61NLF51236	ISSI	23+	TQFP	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市毅创腾电子科技有限公司	IS61NLF51236-7.5TQLI	ISSI	23+	100-TQFP(14x20)	24840	专业分销产品!原装正品!价格优势!	询价
深圳市福田区绿盛电子商行	IS61NLF51236-6.5B3I	ISSI?	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市豪迈兴电子有限公司	IS61NLF51236-7.5TQI	ISSI	24+	QFP	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市佳鑫美电子科技有限公司	IS61NLF5123675TQI	ISSI	25+	QFP	4500	原装正品!公司现货!欢迎来电!	询价
千层芯半导体(深圳)有限公司	IS61NLF51236-7.5TQLI	ISSI	24+	TQFP100	12000	专营ISSI进口原装正品假一赔十可開17增值稅票	询价
深圳市卓越微芯电子有限公司	IS61NLF51236-7.5TQLI	ISSI	25+	TQFP100	3850	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市英卓尔科技有限公司	IS61NLF51236-7.5TQI	ISSI	20+	QFP	500	样品可出,优势库存欢迎实单	询价
深圳市斌腾达科技有限公司	IS61NLF51236-7.5B3I	ISSI, Integrated Silicon Solut	21+	BGA	1000	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS61NLF51236-6.5B3I	ISSI	24+	BGA	65200	一级代理/放心采购	询价

更多IS61NLF51236供应商更新时间2026-2-4 11:10:00

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