32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

文件：95.95 Kbytes 页数：13 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ

文件：259.07 Kbytes 页数：12 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

文件：95.95 Kbytes 页数：13 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ

文件：259.07 Kbytes 页数：12 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

文件：95.95 Kbytes 页数：13 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

文件：320.37 Kbytes 页数：12 Pages

ISSI

矽成半导体

High Speed Low Power Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support

ISSI

矽成半导体

Package：28-BSOJ（0.300"，7.62mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 256KBIT PARALLEL 28SOJ

ISSI, Integrated Silicon Solution Inc

Package：28-TSSOP（0.465"，11.80mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC SRAM 256KBIT PAR 28TSOP I

ISSI, Integrated Silicon Solution Inc

Package：28-TSSOP（0.465"，11.80mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 256KBIT PAR 28TSOP I

ISSI, Integrated Silicon Solution Inc