32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

文件：95.95 Kbytes 页数：13 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ

文件：259.07 Kbytes 页数：12 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ

文件：259.07 Kbytes 页数：12 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

文件：95.95 Kbytes 页数：13 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

文件：95.95 Kbytes 页数：13 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

文件：95.95 Kbytes 页数：13 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ

文件：259.07 Kbytes 页数：12 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ

文件：259.07 Kbytes 页数：12 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

文件：95.95 Kbytes 页数：13 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

文件：95.95 Kbytes 页数：13 Pages

ISSI

矽成半导体