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IS61C64B

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

文件:44.77 Kbytes 页数:9 Pages

ISSI

矽成半导体

IS61C64B-10J

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

文件:44.77 Kbytes 页数:9 Pages

ISSI

矽成半导体

IS61C64B-10T

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

文件:44.77 Kbytes 页数:9 Pages

ISSI

矽成半导体

IS61C64B-12J

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

文件:44.77 Kbytes 页数:9 Pages

ISSI

矽成半导体

IS61C64B-12T

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

文件:44.77 Kbytes 页数:9 Pages

ISSI

矽成半导体

IS61C64B-15J

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

文件:44.77 Kbytes 页数:9 Pages

ISSI

矽成半导体

IS61C64B-15T

8K x 8 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt

文件:44.77 Kbytes 页数:9 Pages

ISSI

矽成半导体

详细参数

  • 型号:

    IS61C64B

  • 制造商:

    ISSI

  • 制造商全称:

    Integrated Silicon Solution, Inc

  • 功能描述:

    8K x 8 HIGH-SPEED CMOS STATIC RAM

供应商型号品牌批号封装库存备注价格
ISSI
22+
SOJ
5000
全新原装现货!自家库存!
询价
ISSI
1923+
SOJ
8200
莱克讯原厂货源每一片都来自原厂原装现货薄利多
询价
ISSI
1430+
SOJ
5800
全新原装,公司大量现货供应,绝对正品
询价
ISSI
24+
SOJ
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ISSI
25+
SOJ28
3215
原装优势!绝对公司现货!
询价
ISSI?
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
ISSI
25+
SOJ
4500
原装正品!公司现货!欢迎来电!
询价
ISSI
23+
TSOP28
8560
受权代理!全新原装现货特价热卖!
询价
ISS
23+
65480
询价
ISSI
23+
SOJ
3000
原装正品假一罚百!可开增票!
询价
更多IS61C64B供应商 更新时间2025-10-11 16:10:00