64K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo

文件：487.16 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo

文件：487.16 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo

文件：487.16 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo

文件：487.16 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo

文件：487.16 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with lo

文件：487.16 Kbytes 页数：9 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ

文件：369.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ

文件：369.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

FEATURES IS61C6416AL and IS64C6416AL • High-speed access time: 12 ns, 15ns • Low Active Power: 175 mW (typical) • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL • High-speed access time: 35 ns, 45ns • Low Active Power: 50 mW (typical) • Low Standby Power: 100 μ

文件：369.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

64K x 16 HIGH-SPEED CMOS STATIC RAM

文件：97.51 Kbytes 页数：17 Pages

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