1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK

文件：1.95251 Mbytes 页数：47 Pages

ISSI

矽成半导体

1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK

文件：1.95251 Mbytes 页数：47 Pages

ISSI

矽成半导体

1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK

文件：1.95251 Mbytes 页数：47 Pages

ISSI

矽成半导体

1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK

文件：1.95251 Mbytes 页数：47 Pages

ISSI

矽成半导体

1Gb (x16, x32) Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs -CAS latency 2, 3 (clock) -Burst length (2, 4, 8, 16) -Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK

文件：1.95251 Mbytes 页数：47 Pages

ISSI

矽成半导体