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IS43LR16640C-5BLI中文资料矽成半导体数据手册PDF规格书

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厂商型号

IS43LR16640C-5BLI

功能描述

1Gb (x16, x32) Mobile DDR SDRAM

文件大小

1.95251 Mbytes

页面数量

47

生产厂商

ISSI

中文名称

矽成半导体

网址

网址

数据手册

下载地址一下载地址二

更新时间

2025-12-1 8:16:00

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IS43LR16640C-5BLI价格和库存,欢迎联系客服免费人工找货

IS43LR16640C-5BLI规格书详情

特性 Features

• JEDEC standard 1.8V power supply.

• VDD = 1.8V, VDDQ = 1.8V

• Four internal banks for concurrent operation

• MRS cycle with address key programs

-CAS latency 2, 3 (clock)

-Burst length (2, 4, 8, 16)

-Burst type (sequential & interleave)

• Fully differential clock inputs (CK, /CK)

• All inputs except data & DM are sampled at the rising

edge of the system clock

• Data I/O transaction on both edges of data strobe

• Bidirectional data strobe per byte of data (DQS)

• DM for write masking only

• Edge aligned data & data strobe output

• Center aligned data & data strobe input

• 64ms refresh period (8K cycle)

• Auto & self refresh

• Concurrent Auto Precharge

• Maximum clock frequency up to 208MHZ

• Maximum data rate up to 416Mbps/pin

• Power Saving support

-PASR (Partial Array Self Refresh)

-Auto TCSR (Temperature Compensated Self Refresh)

-Deep Power Down Mode

-Programmable Driver Strength Controlby Full Strength or 1/2, 1/4, 1/8 or 3/4 of Full Strength

• Status Register Read (SRR)

• LVCMOS compatible inputs/outputs

• Operation Temperature:

-Commercial(TA= 0 ~ 70 °C )

-Industrial(TA= -40 ~ 85 °C )

-Automotive, A1(TA= -40 ~ 85 °C )

-Automotive, A2(TA= -40 ~ 105 °C )

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