Mobile DDR SDRAM

·Double-data rate\n·Four internal banks with bank controls\n·Programmable Burst Length and CAS Latency\n·Power Savings with:- Partial Array Self Refresh (PASR)- Temperature Compenstate Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support

ISSI

矽成半导体

4M x 32Bits x 4Banks Mobile DDR SDRAM

文件：1.95251 Mbytes 页数：47 Pages

ISSI

矽成半导体

动态随机存取存储器 512M, 1.8V, 166Mhz Mobile DDR

ISSI

矽成半导体

动态随机存取存储器 512M, 1.8V, 166Mhz Mobile DDR

ISSI

矽成半导体

Package：90-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc

Package：90-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc

Package：90-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc