1M x 32Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK,

文件：1.80777 Mbytes 页数：42 Pages

ISSI

矽成半导体

Four internal banks for concurrent operation

文件：1.88833 Mbytes 页数：43 Pages

ISSI

矽成半导体

1M x 32Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK,

文件：1.80777 Mbytes 页数：42 Pages

ISSI

矽成半导体

1M x 32Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK,

文件：1.80777 Mbytes 页数：42 Pages

ISSI

矽成半导体

Mobile DDR SDRAM

·Double-data rate\n·Four internal banks with bank controls\n·Programmable Burst Length and CAS Latency\n·Power Savings with:- Partial Array Self Refresh (PASR)- Temperature Compenstate Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support

ISSI

矽成半导体

动态随机存取存储器 128M, 1.8V, M-DDR 4Mx32, 166Mhz, RoHS

ISSI

矽成半导体

动态随机存取存储器 128M, 1.8V, M-DDR 8Mx32, 166Mhz, RoHS

ISSI

矽成半导体

Package：90-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 128MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc

Package：90-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 128MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc

Package：90-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 128MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc