2M x 32Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK,

文件：1.85033 Mbytes 页数：43 Pages

ISSI

矽成半导体

动态随机存取存储器 256M, 1.8V, Mobile DDR, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT

ISSI

矽成半导体

动态随机存取存储器 256M, 1.8V, Mobile DDR, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R

ISSI

矽成半导体

2M x 32Bits x 4Banks Mobile DDR SDRAM

Features • JEDEC standard 1.8V power supply. • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK,

文件：1.85033 Mbytes 页数：43 Pages

ISSI

矽成半导体