512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

文件：739.78 Kbytes 页数：78 Pages

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：1.0657 Mbytes 页数：81 Pages

ISSI

矽成半导体

512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

文件：739.78 Kbytes 页数：78 Pages

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

文件：739.78 Kbytes 页数：78 Pages

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

文件：739.78 Kbytes 页数：78 Pages

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

文件：739.78 Kbytes 页数：78 Pages

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

文件：739.78 Kbytes 页数：78 Pages

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

文件：755.67 Kbytes 页数：79 Pages

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

文件：755.67 Kbytes 页数：79 Pages

ISSI

矽成半导体