IS42S16100-10T数据表ic资料原装现货ISSI-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IS42S16100-10T	文件：739.78 Kbytes Page：78 Pages	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES 文件：739.78 Kbytes 页数：78 Pages	ISSI 矽成半导体	ISSI
IS42S16100-10TI	文件：739.78 Kbytes Page：78 Pages	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES 文件：739.78 Kbytes 页数：78 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-7TL	文件：0 bytes Page：0 Pages	ISSI TSOP	ISSI 矽成半导体上传：深圳市勤思达科技有限公司	ISSI
IS42S16160B-6TL	文件：0 bytes Page：0 Pages	ISSI TSOP54	ISSI 矽成半导体上传：深圳市凌旭科技有限公司	ISSI
IS42S16160B-6TL	文件：0 bytes Page：0 Pages	ISSI TSOP54	ISSI 矽成半导体上传：深圳市宏捷佳电子科技有限公司	ISSI

更多IS42S16100-10T供应商更新时间2025-10-4 16:30:00