IS42S16100-10T中文资料矽成半导体数据手册PDF规格书

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES

• Clock frequency: 166, 143, 100 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Two banks can be operated simultaneously and independently

• Dual internal bank controlled by A11 (bank select)

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length – (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Auto refresh, self refresh

• 4096 refresh cycles every 128 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Byte controlled by LDQM and UDQM

• Package 400-mil 50-pin TSOP II