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型号	下载订购	功能描述	制造商上传企业	LOGO
IS41LV16105B-50TL	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-50TLE	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-50TLI	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60K	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60KE	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60KI	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60KL	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60KLE	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60KLI	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI
IS41LV16105B-60T	文件：131.5 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV 文件：131.5 Kbytes 页数：20 Pages	ISSI 矽成半导体	ISSI

详细参数

型号：
IS41LV16105B
制造商：
ISSI
制造商全称：
Integrated Silicon Solution, Inc
功能描述：
1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	IS41LV16105B-50TI		24+	SOP	7003		询价
深圳市毅创腾电子科技有限公司	IS41LV16105B-50K	ISSI		SOJ42	320	正品原装--自家现货-实单可谈	询价
深圳市凌旭科技有限公司	IS41LV16105B-50K	ISSI	2016+	SOJ42	1980	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市卓越微芯电子有限公司	IS41LV16105B-50K	ISSI	25+	SOJ42	18600	百分百原装正品真实公司现货库存本公司只做原装可	询价
瀚佳科技(深圳)有限公司	IS41LV16105B-60TLI-TR	ISSI, Integrated Silicon Solut	24+	44-TSOP II	56200	一级代理/放心采购	询价
艾睿（深圳）半导体有限公司	IS41LV16105B-50KL	ISSI	2447	SOJ	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	IS41LV16105B-60TLI-TR	ISSI	25+	TSOP-44	1001	就找我吧!--邀您体验愉快问购元件!	询价
深圳市能创芯电子科技有限公司	IS41LV16105B-50K	ISSI	23+	SOJ42	6000	原装正品假一罚百!可开增票!	询价
深圳市威尔健半导体有限公司	IS41LV16105B-50KL	ISSI	23+	SOJ	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	IS41LV16105B60TLI	ISSI Integrated Silicon Soluti	22+	44TSOP II	9000	原厂渠道,现货配单	询价

更多IS41LV16105B供应商更新时间2026-2-5 16:30:00

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