3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

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NAND Flash

·Single Power Supply Operation\n·Cost Effective Sector/Block Architecture\n·Low standby current 1uA (Typ)\n·Serial Peripheral Interface (SPI) Compatible\n·Page Program (up to 256 Bytes) Operation\n·Sector, Block or Chip Erase Operation\n·Low Power Consumption\n·Hardware/Software Write Protection\n·I

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体

3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R

文件：1.76532 Mbytes 页数：56 Pages

ISSI

矽成半导体