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型号	下载订购	功能描述	制造商上传企业	LOGO
IS34ML01G084	文件：2.14405 Mbytes Page：55 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R 文件：2.14405 Mbytes 页数：55 Pages	ISSI 矽成半导体	ISSI
IS34ML01G084	文件：300 bytes Page：1 Pages	NAND Flash ·Single Power Supply Operation\n·Cost Effective Sector/Block Architecture\n·Low standby current 1uA (Typ)\n·Serial Peripheral Interface (SPI) Compatible\n·Page Program (up to 256 Bytes) Operation\n·Sector, Block or Chip Erase Operation\n·Low Power Consumption\n·Hardware/Software Write Protection\n·I	ISSI 矽成半导体	ISSI
IS34ML01G084-BLA1	文件：2.14405 Mbytes Page：55 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R 文件：2.14405 Mbytes 页数：55 Pages	ISSI 矽成半导体	ISSI
IS34ML01G084-BLA2	文件：2.14405 Mbytes Page：55 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R 文件：2.14405 Mbytes 页数：55 Pages	ISSI 矽成半导体	ISSI
IS34ML01G084-BLE	文件：2.14405 Mbytes Page：55 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R 文件：2.14405 Mbytes 页数：55 Pages	ISSI 矽成半导体	ISSI
IS34ML01G084-BLI	文件：2.14405 Mbytes Page：55 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R 文件：2.14405 Mbytes 页数：55 Pages	ISSI 矽成半导体	ISSI
IS34ML01G084-TLA1	文件：2.14405 Mbytes Page：55 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R 文件：2.14405 Mbytes 页数：55 Pages	ISSI 矽成半导体	ISSI
IS34ML01G084-TLA2	文件：2.14405 Mbytes Page：55 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R 文件：2.14405 Mbytes 页数：55 Pages	ISSI 矽成半导体	ISSI
IS34ML01G084-TLE	文件：2.14405 Mbytes Page：55 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R 文件：2.14405 Mbytes 页数：55 Pages	ISSI 矽成半导体	ISSI
IS34ML01G084-TLI	文件：2.14405 Mbytes Page：55 Pages	3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - R 文件：2.14405 Mbytes 页数：55 Pages	ISSI 矽成半导体	ISSI

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	IS34ML01G084	ISSI	23+	BGA	4500	ISSI存储芯片在售	询价
深圳市斌腾达科技有限公司	IS34ML01G084-BLI	ISSI, Integrated Silicon Solut	21+	256-LBGA	189	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IS34ML01G084-TLI-TR	ISSI, Integrated Silicon Solut	24+	48-TSOP I	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	IS34ML01G084-TLI	ISSI	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	IS34ML01G084-TLI-TR	ISSI(美国芯成)	2447	TSOPI-48	315000	1500个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
深圳市科雨电子有限公司	IS34ML01G084-TLI	ISSI	25+	SSOP-48	932	就找我吧!--邀您体验愉快问购元件!	询价
深圳市凌旭科技有限公司	IS34ML01G084-TLI	ISSI	21+	TSOP48	16060		询价
深圳市冠亿通科技有限公司	IS34ML01G084-TLI	ISSI,	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	IS34ML01G084-TLI-TR	ISSI(美国芯成)	2021+	TSOPI-48	499		询价
深圳市威尔健半导体有限公司	IS34ML01G084-TLI	ISSI	23+	TSOP-48	50000	全新原装正品现货,支持订货	询价

更多IS34ML01G084供应商更新时间2025-12-18 14:57:00

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