Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRLR120, SiHLR120) • Straight lead (IRLU120, SiHLU120) • Available in tape and reMel • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • Material categorization: for definitions of compliance ple

文件：1.06578 Mbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Description Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering t

文件：181.33 Kbytes 页数：6 Pages

IRF

iscN-Channel MOSFET Transistor

文件：341.04 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.27492 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

文件：173.96 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Infineon

英飞凌

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：613.11 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

文件：397.92 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

文件：173.96 Kbytes 页数：10 Pages

IRF

丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

文件：246.91 Kbytes 页数：2 Pages

ISC

无锡固电