isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 58A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) =8.9mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：300.19 Kbytes 页数：2 Pages

ISC

无锡固电

High Frequency Synchronous Buck Converters for Computer Processor Power

文件：1.22852 Mbytes 页数：11 Pages

KERSEMI

isc N-Channel MOSFET Transistor

文件：380.41 Kbytes 页数：2 Pages

ISC

无锡固电

采用 D-Pak 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 5V gate-drive voltage (called Logic level)\n• Industry standard surface-mount power package\n• Capable of being wave-soldered\n \n  ;

Infineon

英飞凌

丝印：LR8729；Package：TO-252-3L；N-Channel Enhancement Mode Power MOSFET

Features * 30V,50A Rosow 3.88mO@Ves = 10V (Typ) + Advanced Trench Technology «+ Provide Excellent Roson and Low Gate Charge | + Lead free product is acquired

文件：1.53699 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

HEXFET Power MOSFET

文件：367.35 Kbytes 页数：11 Pages

IRF

Ultra-Low Gate Impedance

文件：353.15 Kbytes 页数：11 Pages

IRF

HEXFET

Power MOSFET

文件：353.15 Kbytes 页数：11 Pages

IRF

Ultra-Low Gate Impedance

文件：353.15 Kbytes 页数：11 Pages

IRF

Compatible with Existing Surface Mount Techniques

文件：237.75 Kbytes 页数：10 Pages

IRF