AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

文件：215.66 Kbytes 页数：11 Pages

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

文件：281.89 Kbytes 页数：12 Pages

IRF

MOSFET N-CH 55V 16A DPAK

Infineon

英飞凌

Silicon planar type

文件：49.05 Kbytes 页数：4 Pages

PANASONIC

松下

Error Amplifier ICs

Erro r Amplifier ICs (SE series) SE005N Variable Voltage Detection Type Error Amplifier ICs SE-B3

文件：11.83 Kbytes 页数：1 Pages

SANKEN

三垦

HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

DESCRIPTION The VB024 is a high voltage integrated circuit made using SGS-THOMSON VIPower thecnology, with vertical current flow power darlington and logic level compatible driving circuit. The device performs the following functions: power stage for driving the primary side of the ignition coi

文件：110.65 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体