丝印：A5SHB；Package：SOT-23；-20V P-Channel Enhancement Mode MOSFET

Description The IRLML2244 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.9A RDS(ON)

文件：2.67241 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

System/Load Switch

Features VDS (V) = -20V RDS(ON)

文件：513.1 Kbytes 页数：8 Pages

UMW

友台半导体

MOSFET

Features VDS (V) = -20V RDS(ON)

文件：383.09 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

-20V 单 P 通道 StrongIRFET ™功率 MOSFET，采用 SOT-23 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)\n• Reduced design complexity in high-side configuration (vs N-channel device)\n• Easier ;

Infineon

英飞凌

丝印：XBPMY；Package：SOT-23；System/Load Switch

Features VDS (V) = -20V RDS(ON)

文件：513.1 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：XBPMY；Package：SOT-23；MOSFET

Features VDS (V) = -20V RDS(ON)

文件：383.09 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

Compatible with existing Surface Mount Techniques

文件：240.85 Kbytes 页数：10 Pages

IRF

Compatible with existing Surface Mount Techniques

文件：240.85 Kbytes 页数：10 Pages

IRF

HEXFETpower MOSFET

文件：240.85 Kbytes 页数：10 Pages

IRF

HEXFETPower MOSFET

文件：315.79 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品