IRLS640A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.18Ω ID=9.8A FEATURES ●Logic-LevelGateDrive ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=200V ●LowerRDS(ON):

IRLS640A

iscN-ChannelMOSFETTransistor

IRLW640A

iscN-ChannelMOSFETTransistor

IRLWI640A

AdvancedPowerMOSFET

JCS640

N-CHANNELMOSFET

ID18.0A VDSS200V Rdson（@Vgs=10V）0.18Ω Qg47nC FEATURES Lowgatecharge LowCrss(typical48pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballa

JCS640CH-O-C-N-B

N-CHANNELMOSFET

JCS640C-O-C-N-B

N-CHANNELMOSFET

ID18.0A VDSS200V Rdson（@Vgs=10V）0.18Ω Qg47nC FEATURES Lowgatecharge LowCrss(typical48pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballa

JCS640FH-O-F-N-B

N-CHANNELMOSFET

JCS640F-O-F-N-B

N-CHANNELMOSFET

ID18.0A VDSS200V Rdson（@Vgs=10V）0.18Ω Qg47nC FEATURES Lowgatecharge LowCrss(typical48pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballa

JCS640H

N-CHANNELMOSFET