Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)

Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ●

文件：96.07 Kbytes 页数：7 Pages

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HEXFET Power MOSFET

Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. ●

文件：131.31 Kbytes 页数：7 Pages

IRF

Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A)

Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a s

文件：90.92 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The D2Pak is a s

文件：322.7 Kbytes 页数：9 Pages

IRF

Power MOSFET(Vdds=30V, Rds(on)=12mohm, Id=64A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

文件：214.15 Kbytes 页数：8 Pages

IRF

FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)

Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconne

文件：94.58 Kbytes 页数：6 Pages

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Generation 5 Technology

Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconne

文件：330.39 Kbytes 页数：7 Pages

IRF

FETKY??MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)

Description The FETKY family of co-packaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconn

文件：126.62 Kbytes 页数：7 Pages

IRF

5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO

DESCRIPTION The IRU3007 controller IC is specifically designed to meet Intel specification for Pentium IIä microprocessor applications as well as the next generation of P6 family processors. The IRU3007 provides a single chip controller IC for the Vcore, LDO controller for GTL+ and an internal 20

文件：100.38 Kbytes 页数：17 Pages

IRF

Generation 5 Technology

文件：308.47 Kbytes 页数：8 Pages

IRF