IRL3103D1中文资料IRF数据手册PDF规格书
IRL3103D1规格书详情
描述 Description
The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Copackaged HEXFET® Power MOSFET and Schottky Diode
● Generation 5 Technology
● Logic Level Gate Drive
● Minimize Circuit Inductance
● Ideal For Synchronous Regulator Application
产品属性
- 型号:
IRL3103D1
- 功能描述:
MOSFET N-CH 30V 64A TO-220AB
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
FETKY™
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-TO-220AB |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
IR |
23+24 |
TO-263 |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
7000 |
询价 | |||
Infineon Technologies |
2022+ |
TO-220-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IR |
2447 |
TO263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IOR |
24+ |
TO-263 |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
IR |
23+ |
D2PAK |
32365 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 |


