STANDARD RECOVERY DIODES

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power diodes in four Basic Configurations ■ Simple Mounting ■ UL E78996 approved

文件：325.08 Kbytes 页数：12 Pages

IRF

STANDARD RECOVERY DIODES

文件：328.08 Kbytes 页数：12 Pages

IRF

STANDARD RECOVERY DIODES

Infineon

英飞凌

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

文件：154.8 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

文件：154.8 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

文件：134.51 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉