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IRGS4B60K

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor

文件:324.07 Kbytes 页数:14 Pages

IRF

IRGS4B60K

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low

文件:295.71 Kbytes 页数:13 Pages

IRF

IRGS4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low

文件:377.18 Kbytes 页数:15 Pages

IRF

IRGS4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform

文件:434.6 Kbytes 页数:15 Pages

IRF

IRGS4B60KD1PBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform

文件:442.69 Kbytes 页数:16 Pages

IRF

IRGS4B60KPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor

文件:366.25 Kbytes 页数:14 Pages

IRF

IRGS4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH

文件:376.95 Kbytes 页数:15 Pages

IRF

IRGS4B60KD1PBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:442.69 Kbytes 页数:16 Pages

IRF

IRGS4B60KD1PBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:442.69 Kbytes 页数:16 Pages

IRF

IRGS4B60KPBF

INSULATED GATE BIPOLAR TRANSISTOR

文件:366.25 Kbytes 页数:14 Pages

IRF

技术参数

  • Switching Frequency min max:

    8.0kHz 30.0kHz

  • Package :

    D2PAK (TO-263)

  • Voltage Class max:

    600.0V

  • IC(@100°) max:

    6.8A

  • IC(@25°) max:

    12.0A

  • ICpuls max:

    22.0A

  • Ptot max:

    63.0W

  • VCE(sat) :

    2.1V 

  • Eon :

    0.073mJ 

  • Eoff(Hard Switching) :

    0.047mJ 

  • td(on) :

    22.0ns 

  • tr :

    18.0ns 

  • td(off) :

    100.0ns 

  • tf :

    66.0ns 

  • QGate :

    18.2nC 

  • Ets  (max):

    0.12mJ (0.13mJ)

  • Moisture Sensitivity Level :

    1

  • Switching Frequency :

    Gen 5 8-30 kHz

  • VCE max:

    600.0V

供应商型号品牌批号封装库存备注价格
IR
20+
TO-263
20500
汽车电子原装主营-可开原型号增税票
询价
IR
23+
TO-263
50000
全新原装正品现货,支持订货
询价
IR
23+
TO-263
50000
全新原装正品现货,支持订货
询价
IR
25+
TO-263
10000
原装现货假一罚十
询价
IR
2022+
D2-PAK
12888
原厂代理 终端免费提供样品
询价
IR
03+
TO-263
403
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IR
23+
TO-263
2903
原厂原装正品
询价
IR
2023+
D2-PAK
50000
原装现货
询价
IR
23+
TO-263
7000
询价
IR
24+
原厂封装
2000
原装现货假一罚十
询价
更多IRGS4B60K供应商 更新时间2026-4-18 14:14:00