IRGS10B60KD数据手册供应代理英飞凌IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRGS10B60KD	文件：324.07 Kbytes Page：15 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien 文件：324.07 Kbytes 页数：15 Pages	IRF	IRF
IRGS10B60KDPBF	文件：365.94 Kbytes Page：15 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru 文件：365.94 Kbytes 页数：15 Pages	IRF	IRF
IRGS10B60KDPBF	文件：309.73 Kbytes Page：15 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：309.73 Kbytes 页数：15 Pages	IRF	IRF
IRGS10B60KDPBF_15	文件：309.73 Kbytes Page：15 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：309.73 Kbytes 页数：15 Pages	IRF	IRF
IRGS10B60KD	文件：300 bytes Page：1 Pages	600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package	Infineon 英飞凌	Infineon

更多IRGS10B60KD供应商更新时间2025-10-9 15:41:00