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IRGB30B60K

INSULATED GATE BIPOLAR TRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB30B60K

包装:卷带(TR) 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 78A 370W TO220AB

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IRGB30B60KPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB30B60KPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB30B60KPBF

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 78A 370W TO220AB

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AOK30B60D

TO247PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK30B60DL

TO247PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AUIRGS30B60K

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRGSL30B60K

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGP30B60KD-E

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-247ADPackage Benefits •BenchmarkEfficiencyforMotorControl

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGP30B60KD-EP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-247ADPackage •Lead-Free Benefits •BenchmarkEfficiencyfor

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGP30B60KD-EPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS30B60

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

产品属性

  • 产品编号:

    IRGB30B60K

  • 制造商:

    Infineon Technologies

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    卷带(TR)

  • IGBT 类型:

    NPT

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.35V @ 15V,30A

  • 开关能量:

    350µJ(开),825µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    46ns/185ns

  • 测试条件:

    400V,30A,10 欧姆,15V

  • 工作温度:

    -55°C ~ 175°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220AB

  • 描述:

    IGBT 600V 78A 370W TO220AB

供应商型号品牌批号封装库存备注价格
IR
16+
原厂封装
360
原装现货假一罚十
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
1822+
TO-220AB
9852
只做原装正品假一赔十为客户做到零风险!!
询价
23+
N/A
37860
正品授权货源可靠
询价
IR
1746+
TO220
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
IR
18+
TO-220AB
41200
原装正品,现货特价
询价
IR/VISHAY
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
IR
2023+
TO-220AB
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
IR
2020+
TO-220AB
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
INFINEON
1503+
TO-220
3000
就找我吧!--邀您体验愉快问购元件!
询价
更多IRGB30B60K供应商 更新时间2024-4-30 13:30:00