INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low

文件：328.22 Kbytes 页数：13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperature rated at 175°C • Lead-Free Benefits • Benchmark Efficiency for Motor Control • Rugged Transient Performance

文件：323.09 Kbytes 页数：13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperature rated at 175°C • Lead-Free Benefits • Benchmark Efficiency for Motor Control • Rugged Transient Performance

文件：385.77 Kbytes 页数：14 Pages

IRF

600V 超快 10-30 kHz IGBT，采用 TO-220AB 封装

Infineon

英飞凌

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 78A 370W TO220AB

INFINEON

英飞凌

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 78A 370W TO220AB

INFINEON

英飞凌