IRG4PH40UD2-E数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Copacked 1200V IGBT in a TO-247AD package with ultrafast 5-40 kHz soft recovery diode.

特性 Features

• Ultrafast IGBT optimized for high operating frequencies up to 200 kHz in resonant mode
• IGBT copackaged with HEXFREDTM ultrafast, ultrasoft recovery anti-parallel diode for use in resonant circuits
• Industry standard TO-247AD package with extended leads
• Lead-free

优势:
• Higher switching frequency capability than competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/ no snubbing.

应用 Application

• Solar
• Welding

简介

IRG4PH40UD2-E属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IRG4PH40UD2-E晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。