首页 >IRG4BC30F-STRR>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IRG4BC30F-STRR

Package:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB;包装:卷带(TR) 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 31A 100W D2PAK

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IRG4BC30K

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4BC30K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

IRG4BC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4BC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEShortCircuitRatedUltraFast1GBT

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •tighterparameterdistributionandhigherefficiencythan previousgenerations •IGBTco-packag

IRF

International Rectifier

IRG4BC30KDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KD-SPBF

INSUKATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul

IRF

International Rectifier

IRG4BC30KD-SPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFRRECOVERYDIODE

IRF

International Rectifier

产品属性

  • 产品编号:

    IRG4BC30F-STRR

  • 制造商:

    Infineon Technologies

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    卷带(TR)

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    1.8V @ 15V,17A

  • 开关能量:

    230µJ(开),1.18mJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    21ns/200ns

  • 测试条件:

    480V,17A,23 欧姆,15V

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-263-3,D²Pak(2 引线 + 接片),TO-263AB

  • 供应商器件封装:

    D2PAK

  • 描述:

    IGBT 600V 31A 100W D2PAK

供应商型号品牌批号封装库存备注价格
Infineon Technologies
21+
D2PAK
800
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
INFINEON
1503+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
Infineon Technologies
2022+
D2PAK
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
INFINEON
23+
D2PAK
8000
只做原装现货
询价
INFINEON
23+
D2PAK
7000
询价
Infineon Technologies
25+
TO-263-3 D?Pak(2 引线 + 接片
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
IR
22+
D2PAK
6000
终端可免费供样,支持BOM配单
询价
Infineon Technologies
21+
D2PAK
13880
公司只售原装,支持实单
询价
更多IRG4BC30F-STRR供应商 更新时间2025-5-18 13:01:00