Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)

VDSS = 55V RDS(on) = 13.9mΩ ID = 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

文件：333.19 Kbytes 页数：12 Pages

IRF

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 13.9m廓 , ID = 51A )

VDSS = 55V RDS(on) = 13.9mΩ ID = 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

文件：291.37 Kbytes 页数：13 Pages

IRF

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-262 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

Infineon

英飞凌

TO-220

IR

国际整流器

上传：深圳市勤思达科技有限公司

TO-220/TO-263

IR

国际整流器

上传：深圳市勤思达科技有限公司