| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRFZ44VZ | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：298.5 Kbytes 页数：12 Pages | IRF | IRF | |
IRFZ44VZ | N-Channel MOSFET Transistor 文件：338.55 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：298.5 Kbytes 页数：12 Pages | IRF | IRF | ||
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com 文件：355.65 Kbytes 页数：13 Pages | IRF | IRF | ||
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com 文件：355.65 Kbytes 页数：13 Pages | IRF | IRF | ||
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：298.5 Kbytes 页数：12 Pages | IRF | IRF | ||
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com 文件：355.65 Kbytes 页数：13 Pages | IRF | IRF | ||
ADVANCED PROCESS TECHNOLOGY 文件：378.2 Kbytes 页数：12 Pages | IRF | IRF | ||
ADVANCED PROCESS TECHNOLOGY 文件：378.2 Kbytes 页数：12 Pages | IRF | IRF | ||
丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor 文件：299.42 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC |
技术参数
- OPN：
IRFZ44VZPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
60 V
- RDS (on) @10V max：
12 mΩ
- ID @25°C max：
57 A
- QG typ @10V：
43 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220AB |
8866 |
询价 | |||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
24+ |
TO-220 |
5000 |
只做原装公司现货 |
询价 | ||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
18+ |
TO-220 |
41200 |
原装正品,现货特价 |
询价 | ||
IR |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON |
25+ |
TO-220 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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