Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V ♦ Lower RDS(ON): 0.214Ω(Typ.)

文件：229.46 Kbytes 页数：7 Pages

Fairchild

仙童半导体

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：685.47 Kbytes 页数：9 Pages

Fairchild

仙童半导体

ISO644x General-Purpose, Reinforced, Quad-Channel Digital Isolators With Robust EMC

1 Features • Up to 100Mbps data rate • Robust SiO2 isolation barrier: – Wide temperature range: –40°C to 125°C – Up to 5000VRMS isolation rating – Up to 10.4kV surge capability – ±100kV/μs typical CMTI • Supply range: 2.25V to 5.5V • Default output high ( ISO644x ) and low ( ISO644xF ) op

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TI

德州仪器

Photocoupler(These Photocouplers cosist of two Gallium Arsenide Infrared Emitting)

文件：103.95 Kbytes 页数：3 Pages

KODENSHI

可天士