IRFW644A

Advanced Power MOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=250V ♦LowerRDS(ON):0.214Ω(Typ.)

IRFW644B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

ISO644X

ISO644xGeneral-Purpose,Reinforced,Quad-ChannelDigitalIsolatorsWithRobustEMC

1Features •Upto100Mbpsdatarate •RobustSiO2isolationbarrier: –Widetemperaturerange:–40°Cto125°C –Upto5000VRMSisolationrating –Upto10.4kVsurgecapability –±100kV/μstypicalCMTI •Supplyrange:2.25Vto5.5V •Defaultoutputhigh(ISO644x)andlow (ISO644xF)op

KPC644

Photocoupler(ThesePhotocouplerscosistoftwoGalliumArsenideInfraredEmitting)

IRFZ24N

IR
TO-247