Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

文件：4.33972 Mbytes 页数：7 Pages

KERSEMI

HEXFET Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFRC20/SiHFRC20) • Str

文件：1.08756 Mbytes 页数：10 Pages

IRF

Power MOSFET

文件：1.13808 Mbytes 页数：13 Pages

VishayVishay Siliconix

威世科技

HEXFET Power MOSFET

DESCRIPTION\nThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.\n\nDynamic dv/dt Rating\nRepetitive Avalanche Rated\nSurface Mount(IRFRC20)\nStraight Lead(IRFUC20)\nAvailable

Infineon

英飞凌