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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFU9214	文件：155.92 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：155.92 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世	Vishay
IRFU9214	文件：268.5 Kbytes Page：13 Pages	Power MOSFET FEATURES • Advanced process technology • Fully avalanche rated • Surface-mount (IRFR9214, SiHFR9214) • Straight lead (IRFU9214, SiHFU9214) • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generat 文件：268.5 Kbytes 页数：13 Pages	VishayVishay Siliconix 威世	Vishay
IRFU9214	文件：3.3941 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：3.3941 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFU9214	文件：107.13 Kbytes Page：10 Pages	Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A) 文件：107.13 Kbytes 页数：10 Pages	IRF	IRF
IRFU9214	文件：300 bytes Page：1 Pages	Power MOSFET Advanced process technology\nFully avalanche rated\nSurface-mount (IRFR9214, SiHFR9214);	Vishay 威世	Vishay
IRFU9214	文件：300 bytes Page：1 Pages	Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)	Infineon 英飞凌	Infineon
IRFU9214PBF	文件：155.92 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：155.92 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世	Vishay
IRFU9214PBF	文件：255.29 Kbytes Page：10 Pages	HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0廓 , ID = -2.7A ) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the de 文件：255.29 Kbytes 页数：10 Pages	IRF	IRF
IRFU9214PBF	文件：3.3941 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an ext 文件：3.3941 Mbytes 页数：7 Pages	KERSEMI	KERSEMI

详细参数

型号：
IRFU9214
功能描述：
MOSFET P-Chan 250V 2.7 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市亚泰盈科电子有限公司	IRFU9214	IR		TO-251	30216	提供BOM表配单TEL:0755-83759919QQ:2355705587杜S	询价
深圳市坤融电子科技有限公司	IRFU9214	IR	24+		5000	只做原厂渠道可追溯货源	询价
深圳市福田区绿盛电子商行	IRFU9214	IR	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市一线半导体有限公司	IRFU9214	IR	24+	TO-251	36800		询价
深圳市星佑电子有限公司	IRFU9214	IR	05+	TO-251	12000	原装进口	询价
深圳市欧立现代科技有限公司	IRFU9214	ir	24+	N/A	6980	原装现货,可开13%税票	询价
深圳市华来深电子有限公司	IRFU9214	IR	23+	TO-251	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市振宏微科技有限公司	IRFU9214	IR	23+	NA	1241	专做原装正品,假一罚百!	询价
艾睿（深圳）半导体有限公司	IRFU9214	IR	2447	DIP SMD	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	IRFU9214	VISHAY	25+	TO-251	3000	就找我吧!--邀您体验愉快问购元件!	询价

更多IRFU9214供应商更新时间2025-10-13 14:01:00

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