首页 >IRFU9214>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IRFU9214

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

VishayVishay Siliconix

威世科技威世科技半导体

IRFU9214

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9214

Power MOSFET

FEATURES •Advancedprocesstechnology •Fullyavalancherated •Surface-mount(IRFR9214,SiHFR9214) •Straightlead(IRFU9214,SiHFU9214) •P-channel •Fastswitching •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerat

VishayVishay Siliconix

威世科技威世科技半导体

IRFU9214

Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)

IRF

International Rectifier

IRFU9214PBF

HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0廓 , ID = -2.7A )

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthede

IRF

International Rectifier

IRFU9214PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

VishayVishay Siliconix

威世科技威世科技半导体

IRFU9214PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    IRFU9214

  • 功能描述:

    MOSFET P-Chan 250V 2.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
TO-251
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
IR
24+
5000
只做原厂渠道 可追溯货源
询价
IR
23+
TO-251
35890
询价
IR
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
IR
24+
TO-251
36800
询价
IR
05+
TO-251
12000
原装进口
询价
IR
23+
TO-251
9500
专业优势供应
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
询价
更多IRFU9214供应商 更新时间2025-7-23 14:01:00