| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HEXFET POWER MOSFET Description Third generation Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the desig 文件：252.41 Kbytes 页数：10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre 文件：832.21 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre 文件：832.21 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre 文件：3.34605 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre 文件：3.34605 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre 文件：832.21 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre 文件：3.34605 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre 文件：832.21 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extre 文件：3.34605 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extre 文件：832.21 Kbytes 页数：8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号：
IRFR9310
- 功能描述：
MOSFET P-Chan 400V 1.8 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
TO252 |
20300 |
VISHAY/威世原装特价IRFR9310即刻询购立享优惠#长期有货 |
询价 | ||
IR/VISHAY |
SOT252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
IR |
24+ |
TO252 |
160848 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
24+ |
TO-252 |
408 |
询价 | |||
IR |
24+ |
原厂封装 |
951 |
原装现货假一罚十 |
询价 | ||
IR |
2015+ |
D-Pak |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IOR |
24+ |
T0252 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
IR |
08+ |
D-pak |
20000 |
普通 |
询价 |
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