丝印：IRFR9120；Package：TO-252；-100V P-Channel Enhancement Mode MOSFET

General Features Vbs =-100V,Ip =-8A Rosin)

文件：1.6735 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：IRFR9120N；Package：TO-252；-100V P-Channel Enhancement Mode MOSFET

General Features VDS=-100V,ID=-8A RDS(ON)

文件：1.59396 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：IRFR9120；Package：TO-252；-100V P-Channel Enhancement Mode MOSFET

General Features Vbs =-100V,Ip =-8A Rosin)

文件：1.6735 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：IRFR9120N；Package：TO-252；-100V P-Channel Enhancement Mode MOSFET

General Features VDS=-100V,ID=-8A RDS(ON)

文件：1.59396 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9120, SiHFR9120) • Straight lead (IRFU9120, SiHFU9120) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：1.18471 Mbytes 页数：13 Pages

VishayVishay Siliconix

威世科技

-100V P-Channel Enhancement Mode MOSFET

General Features Vbs =-100V,Ip =-8A Rosin)

文件：1.6735 Mbytes 页数：5 Pages

UMW

友台半导体

-100V P-Channel Enhancement Mode MOSFET

General Features VDS=-100V,ID=-8A RDS(ON)

文件：1.59396 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -5.6A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.86 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A)

DESCRIPTION Third Generation HEXFETs from Internatioal Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120) • Straight Lead

文件：173.05 Kbytes 页数：6 Pages

IRF

5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs

These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching

文件：73.44 Kbytes 页数：7 Pages

Intersil