IRFR9024NTR芯片代码芯片丝印反查第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFR9024NTR	文件：1.69025 Mbytes Page：5 Pages	丝印：IRFR9024；Package：TO-252；-60V P -Channel Enhancement Mode MOSFET General Features Vps =-60V Ip=-20A Robson) 文件：1.69025 Mbytes 页数：5 Pages	UMW 友台半导体	UMW
IRFR9024NTR	文件：1.50124 Mbytes Page：5 Pages	丝印：IRFR9024；Package：TO-252；60V P-Channel Enhancement Mode MOSFET General Features Vos = -60V Ip =-20 A Ros(on) 文件：1.50124 Mbytes 页数：5 Pages	EVVOSEMI 翊欧	EVVOSEMI
IRFR9024NTR	文件：1.50124 Mbytes Page：5 Pages	丝印：IRFR9024；Package：TO-252；60V P-Channel Enhancement Mode MOSFET General Features Vos = -60V Ip =-20 A Ros(on) 文件：1.50124 Mbytes 页数：5 Pages	EVVOSEMI 翊欧	EVVOSEMI
IRFR9024NTR	文件：1.69025 Mbytes Page：5 Pages	丝印：IRFR9024；Package：TO-252；-60V P -Channel Enhancement Mode MOSFET General Features Vps =-60V Ip=-20A Robson) 文件：1.69025 Mbytes 页数：5 Pages	UMW 友台半导体	UMW
IRFR9024	文件：1.69025 Mbytes Page：5 Pages	-60V P -Channel Enhancement Mode MOSFET General Features Vps =-60V Ip=-20A Robson) 文件：1.69025 Mbytes 页数：5 Pages	UMW 友台半导体	UMW
IRFR9024	文件：1.50124 Mbytes Page：5 Pages	60V P-Channel Enhancement Mode MOSFET General Features Vos = -60V Ip =-20 A Ros(on) 文件：1.50124 Mbytes 页数：5 Pages	EVVOSEMI 翊欧	EVVOSEMI
IRFR9024	文件：4.48925 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.48925 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR9024	文件：4.48925 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.48925 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR9024	文件：5.21397 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：5.21397 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR9024	文件：379.2 Kbytes Page：6 Pages	P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R 文件：379.2 Kbytes 页数：6 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

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详细参数

型号：
IRFR9024
功能描述：
MOSFET MOSFET, P-CHANNEL, -55V, 11A, 175 mOhm, 12.7 nC Qg, D-Pak
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市昊创电子有限公司	IRFR9024NTR	IR	2021+	TO-252	9450	原装现货。	询价
深圳市河锋鑫科技有限公司	IRFR9024NTR	IR	1550+	TO-252	2	原装正品可含税交易	询价
柒号芯城电子商务(深圳)有限公司	IRFR9024NTR	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市福田区绿盛电子商行	IRFR9024NTR	IR	2015+	TO252	19898	专业代理原装现货,特价热卖!	询价
芯有半导体（深圳）有限公司	IRFR9024NTR	INTERNATIONA	05+	原厂原装	21608	只做全新原装真实现货供应	询价
深圳市利加科技有限公司	IRFR9024NTR	IR	16+	TO-252	10000	全新原装现货	询价
深圳市弘为电子有限公司	IRFR9024NTR	IR	24+	原厂封装	4000	原装现货假一罚十	询价
深圳市欧立现代科技有限公司	IRFR9024NTR	ir	24+	N/A	6980	原装现货,可开13%税票	询价
深圳市鹏和科技有限公司	IRFR9024NTR	IR原装	24+	TO-252	5000	全现原装公司现货	询价
瀚佳科技(深圳)有限公司	IRFR9024NTR	IR	24+	TO252	9860	原装现货/放心购买	询价

更多IRFR9024供应商更新时间2026-2-6 10:05:00

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