丝印：IRFR5505；Package：TO-252；-60V P -Channel Enhancement Mode MOSFET

General Features VDS = -60V ID =-10 A RDS(ON)

文件：2.9483 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：IRFR5505；Package：TO-252；-60V P -Channel Enhancement Mode MOSFET

Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON)

文件：1.43536 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：IRFR5505；Package：TO-252；-60V P -Channel Enhancement Mode MOSFET

General Features VDS = -60V ID =-10 A RDS(ON)

文件：2.9483 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：IRFR5505；Package：TO-252；-60V P -Channel Enhancement Mode MOSFET

Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON)

文件：1.43536 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

-60V P -Channel Enhancement Mode MOSFET

Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-10 A RDS(ON)

文件：1.43536 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

Ultra Low On-Resistance

VDSS = -55V RDS(on) = 0.11Ω ID = -18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design th

文件：1.67771 Mbytes 页数：10 Pages

IRF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：1.40006 Mbytes 页数：10 Pages

IRF

Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)

文件：108.01 Kbytes 页数：10 Pages

IRF

Ultra Low On-Resistance

文件：720.54 Kbytes 页数：10 Pages

KERSEMI

ultra low on-resistance

文件：1.64904 Mbytes 页数：10 Pages

IRF