IRFR1N60ATRPBFA资料使用说明书批发供应-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFR1N60ATRPBFA	文件：270.24 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技	Vishay
1N60	文件：71.1 Kbytes Page：1 Pages	GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N60	文件：197.55 Kbytes Page：4 Pages	SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi	LittelfuseLittelfuse Inc. 力特力特公司	Littelfuse
1N60	文件：80.99 Kbytes Page：2 Pages	SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar	FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司	FORMOSA
1N60	文件：41.79 Kbytes Page：1 Pages	JEDECDO-7PACKAGE JEDECDO-7PACKAGE	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
1N60	文件：143.99 Kbytes Page：8 Pages	1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
1N60	文件：310.86 Kbytes Page：2 Pages	GERMANIUMDIODES Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione	DAESAN Daesan Electronics Corp.	DAESAN
1N60	文件：51.09 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODE VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
1N60	文件：239.88 Kbytes Page：2 Pages	SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS Features: HighReliability LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching	WEITRONWEITRON 威堂電子科技	WEITRON
1N60	文件：127.55 Kbytes Page：1 Pages	600VN-ChannelMOSFET Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd	TGS
1N60	文件：138.98 Kbytes Page：2 Pages	SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd	TGS
1N60	文件：72.86 Kbytes Page：3 Pages	SMALLSIGNALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司	JINANJINGHENG
1N60	文件：1.04021 Mbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension	SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司	SY
1N60	文件：947.3 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODE FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio	DIOTECH Diotech Company.	DIOTECH
1N60	文件：275.21 Kbytes Page：6 Pages	1.2Amps,600/650VoltsN-CHANNELMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
1N60	文件：419.26 Kbytes Page：3 Pages	SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage&	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
1N60	文件：75.67 Kbytes Page：1 Pages	Lowforwardvoltagedrop-lowpowerconsumption FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N60	文件：365.394 Kbytes Page：2 Pages	45VDetectionswitchtube	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行	SUNMATE
1N60	文件：365.313 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行	SUNMATE
1N60	文件：434.49 Kbytes Page：6 Pages	N-CHANNELMOSFET DESCRIPTION 1N601N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu	ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司	ZSELEC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市恒意法电子有限公司	IRFR1N60ATRPBF-BE3	Vishay Siliconix	21+	TO-252-3,DPak(2 引线 + 接片	21000	专业分立半导体,原装渠道正品现货	询价
深圳市高捷芯城科技有限公司	IRFR1N60ATRPBF-BE3	VISHAY(威世)	23+	TO252	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳宝隆芯业科技有限公司	IRFR1N60ATRPBF-BE3	Vishay Siliconix	23+	SMD	70323	原装正品实单可谈库存现货	询价
深圳市弘扬芯城科技有限公司	IRFR1N60ATRPBF-BE3	VISHAY(威世)	23+	TO252AA	6000		询价
深圳市特莱科技有限公司	IRFR1N60ATRPBFMOS	IR/INFINEON	24+23+	D-PAK	12580	16年电子元件现货供应商终端BOM表可配单提供样品	询价
深圳市安富世纪电子有限公司	IRFR1N60ATRPBFMOS(场效应管)	IR	21+	D-PAK	50000	终端可免费提供样品,欢迎咨询	询价
深圳市威尔健半导体有限公司	IRFR1N60ATRPBFMOS(场效应管)	VISHAY/威世	23+	TO-252	50000	全新原装正品现货,支持订货	询价
深圳市湘达电子科技有限公司	IRFR1N60ATRPBFMOS(场效应管)	VISHAY/威世	2022+	D-PAK(TO	6600	只做原装,假一罚十,长期供货。	询价
深圳廊盛科技有限公司	IRFR1N60ATRPBFMOS(场效应管)	VISHAY/威世	2022	TO-252	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市科恒伟业电子有限公司	IRFR1N60ATRPBFMOS(场效应管)	IR	21+	D-PAK	9852	只做原装正品现货!或订货假一赔十!	询价

更多IRFR1N60ATRPBFA供应商更新时间2024-5-27 10:50:00

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