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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFR110PBF	文件：3.88858 Mbytes Page：7 Pages	Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：3.88858 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR110PBF	文件：1.84729 Mbytes Page：10 Pages	HEXFET짰Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni 文件：1.84729 Mbytes 页数：10 Pages	IRF	IRF
IRFR110PBF	文件：1.37078 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power 文件：1.37078 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR110TR	文件：1.37078 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power 文件：1.37078 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR110TR	文件：3.88858 Mbytes Page：7 Pages	Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：3.88858 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR110TRL	文件：3.88858 Mbytes Page：7 Pages	Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：3.88858 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR110TRL	文件：1.37078 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power 文件：1.37078 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR110TRLPBF	文件：1.37078 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power 文件：1.37078 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR110TRLPBF	文件：3.88858 Mbytes Page：7 Pages	Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：3.88858 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR110TRPBF	文件：3.88858 Mbytes Page：7 Pages	Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：3.88858 Mbytes 页数：7 Pages	KERSEMI	KERSEMI

详细参数

型号：
IRFR110
功能描述：
MOSFET N-Chan 100V 4.3 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
谛辉(北京/上海/青岛 )电子科技有限公司	IRFR110	IR	25+	原厂封装	78900000	原厂直接发货进口原装	询价
深圳市明嘉莱科技有限公司	IRFR110	IR	24+	TO 252	161382	明嘉莱只做原装正品现货	询价
柒号芯城电子商务(深圳)有限公司	IRFR110	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市星佑电子有限公司	IRFR110	IR	06+	TO-252	15000	原装	询价
深圳市勤思达科技有限公司	IRFR110	IR	1415+	TO-252	28500	全新原装正品,优势热卖	询价
深圳市弘为电子有限公司	IRFR110	IR	24+	原厂封装	118	原装现货假一罚十	询价
深圳市卓越微芯电子有限公司	IRFR110	VISHAY	25+	TO-252	1800	百分百原装正品真实公司现货库存本公司只做原装可	询价
齐创科技(上海,北京,青岛)有限公司	IRFR110	IR	23+	TO-252	5000	原装正品,假一罚十	询价
深圳市欧立现代科技有限公司	IRFR110	ir	24+	N/A	6980	原装现货,可开13%税票	询价
深圳市鹏和科技有限公司	IRFR110	Vishay	24+	TO-252	5000	全现原装公司现货	询价

更多IRFR110供应商更新时间2025-12-10 16:18:00

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