IRFR110TR中文资料PDF规格书
IRFR110TR规格书详情
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR110, SiHFR110)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
产品属性
- 型号:
IRFR110TR
- 功能描述:
MOSFET N-Chan 100V 4.3 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR/VISHAY |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
23+ |
TO252 |
3000 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
ir |
dc03 |
原厂封装 |
1830 |
INSTOCK:2000/tr/dpak |
询价 | ||
IR |
2023+ |
5800 |
进口原装,现货热卖 |
询价 | |||
IR |
23+ |
NA/ |
2000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR/VISHAY |
21+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
22+ |
TO-252 |
15800 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
IR |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
询价 | ||
INTERNATIONALRECTIFIER |
21+ |
35200 |
一级代理/放心采购 |
询价 |