N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

文件：255.93 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of Paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

文件：522.33 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.071Ω (Typ.)

文件：256.95 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. FEATURES · Drain Current –ID= 32A@ TC=25℃ · Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) · Fast Switching

文件：67.82 Kbytes 页数：2 Pages

ISC

无锡固电

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 32A, 200V, RDS(on)= 0.085Ω@VGS= 10 V • Low gate charge ( typical 95 nC) • Low Crss ( typical 75 pF) • Fast switching • 100 ava

文件：669.63 Kbytes 页数：8 Pages

Fairchild

仙童半导体

IR MOSFET?

Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralleling  Simple Drive Requirements  Lead-Free Description IR MOSFET™ technology from Infineon utilizes advanced processing techniques to

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Infineon

英飞凌

Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

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IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：208.74 Kbytes 页数：9 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The TO-220 package is universially preferred for commercial-industrial applications where higher power leve

文件：1.86389 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Power Mosfets

文件：518.69 Kbytes 页数：7 Pages

Samsung

三星