IRFF110

IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE

TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,freedomfromsecondbreakdown,veryfastswitching,easeofparalleling,andtemperaturestabilityoftheelectricalparameters. TheyarewellsuitedforapplicationssuchasswitchingD

IRFF110

3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRFF110

Power MOS Field-Effect Transistors

N-ChannelEnhancement-ModePowerField-EffectTransistors Features •SOAisPowerDissipationLimited •NanosecondSwitchingSpeeds •LinearTransferCharacteristics •HighInputImpedance •Majoritycarrierdevice

IRFF110

N-Channel MOSFET in a Hermetically sealed TO39

IRFF110

3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET;

IRFF110

N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A.;

IRFF110

MOSFETs and JFETs;