IRFF110中文资料INTERSIL数据手册PDF规格书
IRFF110规格书详情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
• 3.5A, 100V
• rDS(ON) = 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
产品属性
- 型号：
IRFF110
- 制造商：
International Rectifier
- 功能描述：
Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39
- 功能描述：
TRANS MOSFET N-CH 100V 3.5A 3PIN TO-39 - Bulk
- 功能描述：
N CH MOSFET 100V 3.5A TO-20
- 功能描述：
MOSFET N TO-39
- 功能描述：
MOSFET, N, TO-39
- 功能描述：
N CH MOSFET, 100V, 3.5A, TO-205AF; Transistor
- Polarity：
N Channel; Continuous Drain Current
- Id：
3.5A; Drain Source Voltage
- Vds：
100V; On Resistance
- Rds(on)：
600mohm; Rds(on) Test Voltage
- Vgs：
10V; Threshold Voltage Vgs
- Typ：
4V ;RoHS
- Compliant：
No
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Intersil(英特矽尔) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
IRFF110 |
25+ |
3 |
3 |
询价 | |||
IR |
23+ |
65480 |
询价 | ||||
IR |
24+ |
SMD |
4 |
“芯达集团”专营军工百分之百原装进口 |
询价 | ||
IR |
2450+ |
CN3 |
6540 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
INTERSIL |
24+ |
TO-39 |
1931 |
询价 | |||
IR |
08+ |
CNA3 |
2 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
HARRIS |
23+ |
CAN3 |
5000 |
原装正品,假一罚十 |
询价 | ||
24+ |
CAN |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | |||
IR |
22+ |
CNA3 |
20000 |
公司只做原装 品质保障 |
询价 |
