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IRFG110

SimpleDriveRequirements

IRF

International Rectifier

IRFG110

POWERMOSFETTHRU-HOLE(MO-036AB)

IRF

International Rectifier

IRFL110

PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRFL110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Repetitive

VishayVishay Siliconix

威世科技威世科技半导体

IRFL110PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin

IRF

International Rectifier

IRFL110PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Repetitive

VishayVishay Siliconix

威世科技威世科技半导体

IRFL110TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Repetitive

VishayVishay Siliconix

威世科技威世科技半导体

IRFL110TRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Repetitive

VishayVishay Siliconix

威世科技威世科技半导体

IRFL110TRPBF

N-Channel100-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFL110TRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRFE110

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 100V 3.5A 18-Pin LLCC

  • 功能描述:

    TRANS MOSFET N-CH 100V 3.5A 18PIN LCC - Bulk

  • 功能描述:

    N CHANNEL MOSFET, 100V, 3.5A, LCC; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    3.5A; Drain Source Voltage

  • Vds:

    100V; On Resistance

  • Rds(on):

    600mohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    4V ;RoHS

  • Compliant:

    No

供应商型号品牌批号封装库存备注价格
INTERNATIONA
05+
原厂原装
4241
只做全新原装真实现货供应
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
22+
18-pin LCC
6000
终端可免费供样,支持BOM配单
询价
IR
23+
18-pin LCC
8000
只做原装现货
询价
IR
23+
18-pin LCC
7000
询价
IR
24+
SMD
50
“芯达集团”专营军工百分之百原装进口
询价
IR
24+
LCC
200
进口原装正品优势供应
询价
IR
专业军工
NA
1000
只做原装正品军工级部分订货
询价
IR
三年内
1983
只做原装正品
询价
IR
24+
LCC
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
询价
更多IRFE110供应商 更新时间2025-5-29 15:23:00