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IRFR024

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR024

PowerMOSFET

FEATURES •DynamicdV/dtrating •Surface-mount(IRFR024,SiHFR024) •Straightlead(IRFU024,SiHFU024) •Availableintapeandreel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半导体

IRFR024

N-ChannelEnhancementModeMOSFET

Description TheIRFR024NTusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=60VID=30A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRFR024A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR024N

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=17A??

IRF

International Rectifier

IRFR024N

UltraLowOn-Resistance

Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Ultr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR024N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR024N

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRFR024NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFR024NPBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    IRFE024SCV

  • 制造商:

    International Rectifier

  • 功能描述:

    TRANS MOSFET N-CH 60V 6.7A 18PIN LCC - Bulk

供应商型号品牌批号封装库存备注价格
IR
22+
18-pin LCC
6000
终端可免费供样,支持BOM配单
询价
IR
23+
18-pin LCC
8000
只做原装现货
询价
IR
23+
18-pin LCC
7000
询价
INTERNATIONA
05+
原厂原装
4241
只做全新原装真实现货供应
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
24+
SMD
50
“芯达集团”专营军工百分之百原装进口
询价
IR
24+
LCC
200
进口原装正品优势供应
询价
IR
专业军工
NA
1000
只做原装正品军工级部分订货
询价
IR
三年内
1983
只做原装正品
询价
IR
24+
LCC
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
询价
更多IRFE024SCV供应商 更新时间2025-7-23 14:00:00